advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 20m optimal dc/dc battery application i d 6 rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 125 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 1 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.008 drain current 3 , v gs @ 4.5v 4.7 pulsed drain current 1 30 gate-source voltage 10 drain current 3 , v gs @ 4.5v 6.0 parameter rating drain-source voltage 20 200109061-1/4 AP6800GEO pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. d2 s2 s2 g2 d1 s1 s1 g1 tssop-8 s1 g1 d1 s2 g2 d2
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - - 20 m v gs =4v, i d =4a - - 21 m v gs =2.5v, i d =2a - - 25 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =10v - - 30 ua q g total gate charge 2 i d =6a - 23.4 37 nc q gs gate-source charge v ds =15v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 11.1 - nc t d(on) turn-on delay time 2 v ds =10v - 8.2 - ns t r rise time i d =1a - 18.4 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 19.6 - ns t f fall time r d =10 -58 - ns c iss input capacitance v gs =0v - 580 930 pf c oss output capacitance v ds =20v - 315 - pf c rss reverse transfer capacitance f=1.0mhz - 165 - pf r g gate resistance f=1.0mhz - 2 3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.84a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =6a, v gs =0v, - 40 - ns q rr reverse recovery charge di/dt=100a/s - 39 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 208 /w when mounted on min. copper pad. 2/4 AP6800GEO
AP6800GEO fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance 200 1 0906 1 - 1 /4 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 10 40 70 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 4a t a =25 o c 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 4.5v 3.5v 3.0v 2.5v v g =2.0v 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.5v 3.5v 3.0v 2.5v v g =2.0v 0.3 0.7 1.1 1.5 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 6a v g = 4.5v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =150 o ct j =25 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP6800GEO 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =208 o c/w t t 0.02 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v v ds =12v v ds =15v 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g 5v q gs q gd q g charge 0 10 20 30 40 50 60 70 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds = 5v
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